The Oxford Ultim® Extreme EDS Detector is a breakthrough solution for ultra-high resolution FEG-SEM applications. This state-of-the-art detector combines the largest sensor sizes with Extreme electronics to deliver unparalleled speed and sensitivity. It is designed to maximize sensitivity and spatial resolution, making it ideal for a wide range of advanced elemental analysis applications.
Features of the Oxford Ultim® Extreme EDS Detector
Speed
- Extreme electronics with the X4 pulse processor allow Ultim® Extreme to map samples at count rates of 1,500,000 cps. It also accurately quantifies composition at 400,000 cps.
Sensitivity
- The windowless 100 mm² sensor area of Ultim® Extreme delivers unparalleled count rates under the most demanding analytical conditions. This ensures maximum sensitivity and spatial resolution.
High-Quality Data Collection
- The large SDD sensors of Ultim® Extreme collect up to 17x more data in the same time with no loss of accuracy. Consequently, you can map larger areas, improve statistics in each data point, collect data much faster, or investigate the smallest nanostructures. Indeed, Ultim® Extreme provides the ultimate solution for X-ray analysis in the SEM.
Optimized Performance
- The radical geometry of Ultim® Extreme optimizes both imaging and EDS performance at low kV and short working distances. This allows EDS resolution to approach that of the SEM, delivering solutions beyond conventional micro- and nano-analysis.
The Oxford Ultim® Extreme EDS Detector offers exceptional performance and reliability for comprehensive elemental analysis. Its advanced technology, combined with unparalleled speed and sensitivity, ensures precise and dependable results. This makes it an essential tool for researchers and professionals in materials science and engineering.
Solutions for Biological Samples
Ultim Extreme provides definitive elemental detection for biological samples, enabling fast, accurate data collection in low kV conditions suited to life science SEM applications.
100nm section of unstained leaf tissue on aluminum stub, imaged using 2.5kV for 15 minutes.
Solutions for Materials Science – Ultimate spatial resolution for SEM-EDS
- Sub 10nm element characterization in the SEM
- X-ray map resolution close to SEM resolution
Example 1: Semiconductor Device
X-Ray map of smartphone CPU acquired at 3kV, 38,000CPS for 30mins – sample and data courtesy of MSSCorps.
Example 2: Sn imaging standard
X-ray mapping at 2kV of tin nano-sphere high resolution imaging standard, 6,500CPS, 15min acquisition time.
Example 3: Ni-base Superalloy
Fine Ni3(NbTi) gamma” precipitates in Alloy 718, collected at 1.5 kV, 2,000cps for 18 minutes – Sample and data courtesy of University of Manchester.
